To inspect and reverse engineer microelectronics, obtaining detailed 3D images of the parts is necessary. However, the use of nondestructive methods like X-ray computed tomography (X-ray CT) has limitations in resolution. Destructive methods, which involve delayering and imaging the sample, have a tradeoff between throughput and resolution. Focused ion beam (FIB) delayering has high precision but low throughput, while mechanical methods provide fast delayering but low precision and potential damage to the sample. In this proposal, femtosecond laser delayering combined with multimodality microscopy for imaging is suggested for rapid 3D imaging. This method has several benefits: it eliminates 3D image distortion caused by non-flat layers and maintains layer height variations within a small range. Additionally, it allows for material characterization based on the processing of material ablation rate at various locations as well as using laser-induced breakdown spectroscopy.