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Cost-Effective IC Redaction through a CMOS/MRAM Transistor-Level Programmable Fabric

Project ID:

P19_24

Principal Investigator:

Dr. Carl Sechen

Co-Principal Investigator(s):

Dr. Joseph Friedman, Dr. Yiorgos Makris

Topic Areas:

Hardware IP Protection

Abstract

This project has been developing a cost-effective mechanism for protecting sensitive hardware intellectual property through hybrid ASIC/Programmable integrated circuit design. In contrast with the use of eFPGAs or other Look-Up Table (LUT-) based solutions, which incur intolerable area, power and performance overhead and which require external storage and loading of the configuration bitstream upon power-on, this project takes a different approach: based on the observation that existing solutions may be an overkill, we start with a state-of-the-art Transistor-Level Programmable (TRAP) fabric, which PI Sechen and Co-PI Makris developed previously for the purpose of IC redaction, and we seek to explore the trade-off between fine-grain programmability and ability to withstand bitstream retrieval attacks. Moreover, leveraging Co-PI Friedman’s expertise in spintronics, we seek to replace the SRAM memory that is currently employed in TRAP with MRAM. Besides dramatically reducing the required overhead, the proposed fine-grained hybrid CMOS/MRAM implementation of TRAP also offers the option of non-volatile bitstream storage, thereby simplifying IC operation. Having successfully designed in the first year of this project the fundamental hybrid CMOS/MRAM component and having confirmed with our technical liaison from GlobalFoundries feasibility of its fabrication in the GF22FDSOI process, in the second year of this project we seek to design the entire CMOS/MRAM TRAP fabric and identify a pathway to tape-out, anticipating an eventual demonstration in silicon in the third year of this project.

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